Modification of work function of Ti by self-assembled monolayer molecules on Si O 2 p-Si

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Gu, Diefeng ^a   Sistiabudi, Rizaldi ^a   Dey, Sandwip K ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PERMITTIVITY; DIPOLE MOMENTS; EQUIVALENT OXIDE THICKNESS (EOT); VALENCE-BAND-EDGE ENERGIES;

CAPACITANCE; CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROPHOBICITY; MATHEMATICAL MODELS; MICROELECTRONICS; MOSFET DEVICES; OPTOELECTRONIC DEVICES; PERMITTIVITY; SELF ASSEMBLY; SILICA; THRESHOLD VOLTAGE;

TITANIUM;

EID: 21644474787     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1939083     Document Type: Article

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