Athermal annealing of Si-implanted GaAs and InP

Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 130-135

  Rao, Mulpuri V ^a   Brookshire, J ^a   Mitra, S ^a   Qadri, Syed B ^b   Fischer, R ^b   Grun, J ^b   Papanicolaou, N ^b   Yousuf, M ^c   Ridgway, M C ^d  

^a Krasnow Institute for Advanced Study   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c GEORGE WASHINGTON UNIVERSITY   (United States)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; VACUUM; X RAY DIFFRACTION;

ATHERMAL ANNEALING;

ANNEALING;

EID: 0042706774     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1576896     Document Type: Article

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