Far-infrared spectroscopic, magnetotransport, and x-ray study of athermal annealing in neutron-transmutation-doped silicon

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 680-682

  Donnelly, D W ^a   Covington, B C ^a   Grun, J ^a   Hoffman, C A ^a   Meyer, J R ^a   Manka, C K ^a   Glembocki, O ^a   Qadri, S B ^a   Skelton, E F ^a  

^a SAM HOUSTON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; INFRARED SPECTROSCOPY; LASER PULSES; SEMICONDUCTING SILICON; X RAY DIFFRACTION;

MAGNETOTRANSPORT CHARACTERIZATION; NEUTRON TRANSMUTATION DOPED SILICON;

SEMICONDUCTOR DOPING;

EID: 0031552785     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119828     Document Type: Article

References (14)