Structural modifications of silicon-implanted GaAs induced by the athermal annealing technique

Applied Physics A: Materials Science and Processing

Volumn 79, Issue 8, 2004, Pages 1971-1977

  Qadri, S B ^a   Yousaf, M ^b   Kendziora, C A ^a   Nachumi, B ^a   Fischer, R ^a   Grun, J ^a   Rao, M V ^c   Tucker, J ^c   Siddiqui, S ^d   Ridgway, M C ^e  

^a NAVAL RESEARCH LABORATORY   (United States)

^b GEORGE WASHINGTON UNIVERSITY   (United States)

^c GEORGE MASON UNIVERSITY   (United States)

^d THOMAS JEFFERSON HIGH SCHOOL FOR SCIENCE AND TECHNOLOGY   (United States)

^e AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LASER BEAM EFFECTS; MECHANICAL WAVES; MELTING; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTING SILICON; X RAY DIFFRACTION ANALYSIS;

BRAGG PEAKS; LATTICE EXPANSION; STRUCTURAL MODIFICATIONS; THERMAL ANNEALING TECHNIQUE;

SEMICONDUCTING GALLIUM;

EID: 6344276766     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-003-2174-9     Document Type: Article

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