Thermal and mechanical damage of GaAs in picosecond regime

Optics and Laser Technology

Volumn 33, Issue 6, 2001, Pages 363-369

  Pratap Singh, Amit ^a   Kapoor, Avinashi ^a   Tripathi, K N ^a   Rvindra Kumar, G ^b  

^a UNIVERSITY OF DELHI   (India)

^b TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

Gallium arsenide (GaAs); Laser induced surface damage (LIDT); Mechanical damage; Thermal damage

Indexed keywords

CRACKS; CRYSTAL DEFECTS; FRACTURE; LASER DAMAGE; LASER PULSES; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

MECHANICAL DAMAGE; THERMAL DAMAGE;

SINGLE CRYSTALS;

EID: 0035451604     PISSN: 00303992     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0030-3992(01)00038-X     Document Type: Article

References (11)

1. Laser induced recrystallization and damage in GaAs
2. Laser induced damage in GaAs at 1.06 μm wavelength, surface effects
3. Optical heating in semiconductors: Laser damage in Ge, Si, InSb and GaAs
4. Electron microscope observation of laser damage on GaAs, GaSb and InSb
5. Defect-initiated emission of Ga atoms from the GaAs (110) surface induced by pulsed laser irradiation
6. Laser-stimulated nonthermal particle emission from InP and GaAs surfaces
7. Pattern formation in laser induced melting
8. 2 adsorption and etching of GaAs (110) studied by use of scanning tunnling microscopy
9. An experimental test of GaAs decomposition due to pulsed laser irradiation
10. Laser-induced electronic processes on GaP (110) surfaces: Particle emission and ablation initiated by defects