Use of multichannel heterostructures to improve the access resistance and f T linearity in GaN-based HEMTs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 41-42

  Palacios, T ^a   Chini, A ^a   Buttari, D ^a   Heikman, S ^a   Keller, S ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS RESISTANCE; CONTACT RESISTANCE; GATE METALLIZATION; MULTICHANNEL HETEROSTRUCTURES;

CURRENT DENSITY; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; EQUIVALENT CIRCUITS; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; POWER AMPLIFIERS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 15544371241     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367774     Document Type: Conference Paper

References (3)

1. S. Heikman, S. Keller, D. S. Green, S. P. DenBaars, and U. K. Mishra J. Appl. Phys. 94, 5321 (2003).
2. A. Chini, R. Coffie, G. Meneghesso, E. Zanoni, D. Buttari, S. Heikman, S. Keller, and U. K. Mishra, Electron. Letters 39, 625 (2003).
3. D. Buttari, A. Chini, T. Palacios, R. Coffie, L. Shen, H. Xing, S. Heikman, L. McCarthy, A. Chakraborty, S. Keller, and U.K. Mishra, Appl. Phys. Lett. 83, 4779 (2003).