Linearity and gain characteristics of AlGaN/GaN HEMTs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 697-699

  Wu, Y F ^a   Chavarkar, P M ^a   Moore, M ^a   Parikh, P ^a   Mishra, U K ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRON TRANSPORT PROPERTIES; INTERMODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

GAIN CHARACTERISTICS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036926528     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Y.-F. Wu et al., IEDM Technical Digest, pp. 378380, Washington, DC, Dec 2-5, 2001
2. V. Tilak et al, IEEE Electron Dev. Lett., Nov. 2001.
3. L. Kehias et al, to be published.
4. H. Kromer, private communication, March 2002.