Distribution of the high resistivity region in CdZnTe and its effects on gamma-ray detector performance

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 640-644

  Terterian, S ^a   Chu, M ^a   Ting, D ^a  

^a Fermionics Corporation   (United States)

Author keywords

Bridgman growth; CdZnTe; Gamma ray detectors; Single crystal

Indexed keywords

CADMIUM COMPOUNDS; CRYSTALLIZATION; DETECTORS; FERMI LEVEL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GAMMA RAYS; MATHEMATICAL MODELS; PRECIPITATION (CHEMICAL); SEGREGATION (METALLOGRAPHY); SINGLE CRYSTALS; SPECTRUM ANALYSIS;

BRIDGMAN GROWTH; CDZNTE; CRYSTAL BOULES; GAMMA RAY DETECTORS; RADIATION SPECTRA;

ELECTRIC CONDUCTIVITY;

EID: 3042747315     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0059-0     Document Type: Conference Paper

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