Ultrathin epitaxial Al2 O3 films grown on Nb (110) sapphire (0001) investigated by tunneling spectroscopy and microscopy

Journal of Applied Physics

Volumn 97, Issue 8, 2005, Pages

  Dietrich, Ch ^a   Koslowski, B ^a   Ziemann, P ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODE LUMINESCENCE; OXIDE LAYERS; OXYGEN VACANCIES; TUNNELING VOLTAGES;

ALUMINUM COMPOUNDS; ELECTRONIC PROPERTIES; LOW ENERGY ELECTRON DIFFRACTION; LUMINESCENCE; NIOBIUM; OXIDATION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; ULTRAVIOLET SPECTROSCOPY;

EPITAXIAL GROWTH;

EID: 21544459368     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1876580     Document Type: Article

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