A statistical approach to characterizing the reliability of systems utilizing HBT devices

2004 ROCS Workshop - Reliability of Compound Semiconductors, Proceedings

Volumn , Issue , 2004, Pages 3-7

  Chen, Yuan ^a   Wang, Qing ^b   Kayali, Sammy ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b CALIFORNIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT EXPONENT; FAILURE MECHANISMS; JUNCTION TEMPERATURE; SYSTEM LEVEL;

ACTIVATION ENERGY; AMPLIFIERS (ELECTRONIC); CURRENT DENSITY; DEGRADATION; ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT; RELIABILITY; SERVICE LIFE; STATISTICAL METHODS; TEMPERATURE DISTRIBUTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 21444443166     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

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