Low-temperature, high-current lifetests on InP-based HBT's

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 206-213

  Paine, B M ^a   Thomas, S ^b   Delaney, M J ^b  

^a BOEING COMPANY   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

Acceleration; Current density; Degradation; Failure analysis; Heterojunction bipolar transistors; Indium phosphide; Laboratories; Life testing; Satellites; Temperature

Indexed keywords

ACCELERATION; CHEMICAL ACTIVATION; CURRENT DENSITY; DEGRADATION; FAILURE ANALYSIS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INDIUM PHOSPHIDE; LABORATORIES; SATELLITES; TEMPERATURE;

ACCELERATION FACTORS; FAILURE MECHANISM; HIGH CURRENTS; JUNCTION TEMPERATURES; LIFE-TESTING; LOW TEMPERATURES; LOW-ACTIVATION ENERGY; PRODUCT LIFE;

ACTIVATION ENERGY;

EID: 2942700916     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922903     Document Type: Conference Paper

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