High-reliability GaAs HBT monolithic microwave amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1997, Pages 141-144

  Yamada, F M ^a   Oki, A K ^a   Streit, D C ^a   Umemoto, D K ^a   Tran, L T ^a   Block, T R ^a   Okazaki, D T ^a   Hoppe, M M ^a   Rezek, E A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

MEDIAN TIME TO FAILURE (MTF);

MICROWAVE AMPLIFIERS;

EID: 0030673592     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)