A simple practical technique for estimating the junction temperature and the thermal resistance of a GaAs HBT

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 1005-1008

  Olavsbråten, Morten ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ESTIMATION; HEAT CONDUCTION; HEAT RESISTANCE; POLYIMIDES; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; THERMAL CONDUCTIVITY;

GALLIUM ARSENIDE HETEROJUNCTION BIPOLAR TRANSISTOR; JUNCTION TEMPERATURE; SINGLE FINGER TRANSISTOR; SOFTWARE PACKAGE MATLAB;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036070084     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Direct extraction technique to derive the junction temperature of HBT's under high self-heating bias conditions
2. A simple method for the thermal resistance measurement of AlGaAs/GaAs hetero-junction bipolar transistor
3. CW measurement of HBT thermal resistance
4. An advanced GaAs/InGaP HBT MMIC process