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Volumn 26, Issue 10, 1997, Pages 1118-1122

Flow modulation epitaxy of indium gallium nitride

(3) Keller, S a Mishra, U K a Denbaars, S P a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Atomic force microscopy; Flow modulation epitaxy; Indium gallium nitride (InGaN); Metalorganic chemical vapor deposition (MOCVD); Photoluminescence

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

FLOW MODULATION EPITAXY (FME); INDIUM GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0031257079 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-997-0005-z Document Type: Article

Times cited : (16)

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