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Volumn 83, Issue 10, 2003, Pages 2004-2006

Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si1-xGex(x=0,0.6)/HfO2 gate stack

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; LEAKAGE CURRENTS; POLYSILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE STACKS;

SILICON COMPOUNDS;

EID: 0141886162 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1608487 Document Type: Article

Times cited : (5)

References (12)

1
- 0035894001
- A. Callegari, E. Cariter, M. Gribelyuk, H. F. Okorn-schmidt, and T. Zabel, J. Appl. Phys. 90, 6466 (2001).
- (2001) J. Appl. Phys. , vol.90 , pp. 6466
- Callegari, A.¹ Cariter, E.² Gribelyuk, M.³ Okorn-Schmidt, H.F.⁴ Zabel, T.⁵

2
- 0035878662
- J. J. Chambers and G. N. Parsons, J. Appl. Phys. 90, 918 (2001).
- (2001) J. Appl. Phys. , vol.90 , pp. 918
- Chambers, J.J.¹ Parsons, G.N.²

3
- 0036082008
- K. Onishi, C. S. Kang, R. Choi, H.-J. Cho, S. Gopalan, R. Nieh, S. Krishnan, and J. C. Lee, Reliability Phys. Symp. Proc., 419 (2002).
- (2002) Reliability Phys. Symp. Proc. , pp. 419
- Onishi, K.¹ Kang, C.S.² Choi, R.³ Cho, H.-J.⁴ Gopalan, S.⁵ Nieh, R.⁶ Krishnan, S.⁷ Lee, J.C.⁸

4
- 79956051362
- S. Gopalan, K. Onishi, R. Nieh, C. S. Kang, R. Choi, H.-J. Cho, and J. C. Lee, Appl. Phys. Lett. 80, 4416 (2000).
- (2000) Appl. Phys. Lett. , vol.80 , pp. 4416
- Gopalan, S.¹ Onishi, K.² Nieh, R.³ Kang, C.S.⁴ Choi, R.⁵ Cho, H.-J.⁶ Lee, J.C.⁷

5
- 79956033787
- D. C. Gilmer, R. Hegde, R. Cotton, R. Garcia, V. Dhandapani, D. Triyoso, D. Roan, A. Franke, R. Rai, L. Prabhu, C. Hobbs, J. M. Grant, L. La, S. Samavedam, B. Taylor, H. Tseng, and P. Tobin, Appl. Phys. Lett. 81, 1288 (2001).
- (2001) Appl. Phys. Lett. , vol.81 , pp. 1288
- Gilmer, D.C.¹ Hegde, R.² Cotton, R.³ Garcia, R.⁴ Dhandapani, V.⁵ Triyoso, D.⁶ Roan, D.⁷ Franke, A.⁸ Rai, R.⁹ Prabhu, L.¹⁰ Hobbs, C.¹¹ Grant, J.M.¹² La, L.¹³ Samavedam, S.¹⁴ Taylor, B.¹⁵ Tseng, H.¹⁶ Tobin, P.¹⁷

6
- 0034453391
- C. H. Lee, H. F. Luan, W. P. Bai, S. J. Lee, T. S. Jeon, Y. Senzaki, D. Roberts, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet., 27 (2000).
- (2000) Tech. Dig. - Int. Electron Devices Meet. , pp. 27
- Lee, C.H.¹ Luan, H.F.² Bai, W.P.³ Lee, S.J.⁴ Jeon, T.S.⁵ Senzaki, Y.⁶ Roberts, D.⁷ Kwong, D.L.⁸

7
- 79956035147
- H. Watanabe and N. Ikarashi, Appl. Phys. Lett. 80, 559 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 559
- Watanabe, H.¹ Ikarashi, N.²

8
- 0036900077
- S. K. Kang, B. G. Min, J. H. Yoo, S. W. Kam, D.-H. Ko, H. B. Rang, C. W. Kang, and M.-H. Cho, Electrochem. Solid-State Lett. 5, G113 (2002).
- (2002) Electrochem. Solid-State Lett. , vol.5
- Kang, S.K.¹ Min, B.G.² Yoo, J.H.³ Kam, S.W.⁴ Ko, D.-H.⁵ Rang, H.B.⁶ Kang, C.W.⁷ Cho, M.-H.⁸

9
- 0002375638
- W. C. Lee, T. J. King and C. Hu, IEEE Electron Device Lett. 20, 9 (1999).
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 9
- Lee, W.C.¹ King, T.J.² Hu, C.³

10
- 0037351262
- S.-K. Kang, J. J. Kim, D.-H. Ko, H. B. Kang, C. W. Yang, T. H. Ahn, I. S. Yeo, T. W. Lee, and Y. H. Lee, J. Electrochem. Soc. 150, G167 (2003).
- (2003) J. Electrochem. Soc. , vol.150
- Kang, S.-K.¹ Kim, J.J.² Ko, D.-H.³ Kang, H.B.⁴ Yang, C.W.⁵ Ahn, T.H.⁶ Yeo, I.S.⁷ Lee, T.W.⁸ Lee, Y.H.⁹

11
- 84886448078
- V. Z.-Q. Li, M. R. Mirabedini, R. T. Kuehn, J. J. Wortman, and M. C. Öztürk, Tech. Dig. - Int. Electron Devices Meet., 833 (1997).
- (1997) Tech. Dig. - Int. Electron Devices Meet. , pp. 833
- Li, V.Z.-Q.¹ Mirabedini, M.R.² Kuehn, R.T.³ Wortman, J.J.⁴ Öztürk, M.C.⁵

12
- 79955989385
- K. Muraoka, Appl. Phys. Lett. 80, 4516 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 4516
- Muraoka, K.¹

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