Fully silicided NiSi gate electrodes on HfSiON gate dielectrics for low-power applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2205-2209

  Manabe, Kenzo ^a   Takahashi, Kensuke ^a   Ikarashi, Taeko ^a   Morioka, Ayuka ^a   Watanabe, Heiji ^a   Yoshihara, Takuya ^a   Tatsumi, Toru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

HfSiON; High k; Metal gate; MOSFET; Nickel monosilicide

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; DIELECTRIC DEVICES; DRY ETCHING; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; NICKEL COMPOUNDS; SILICA;

HFSION; HIGH-K; METAL GATES; NICKEL MONOSILICIDE;

ELECTRODES;

EID: 21244504605     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2205     Document Type: Conference Paper

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