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Volumn 84, Issue 17, 2004, Pages 3292-3294

Full silicidation process for making CoSi2 on SiO2

(5)  Zhao, Q T a   Rije, E a   Lenk, St a   Bay, H a   Mantl, S a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; NUCLEATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICA; SILICON WAFERS; THERMAL EFFECTS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

EID: 2542446390     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1728299     Document Type: Article
Times cited : (8)

References (7)
  • 6
    • 0013069974 scopus 로고
    • INSPEC, The Institution of Electrical Engineers, London
    • Properties of Metal Suicides, edited by K. Maex and M. van Rossum (INSPEC, The Institution of Electrical Engineers, London, 1995).
    • (1995) Properties of Metal Suicides
    • Maex, K.1    Van Rossum, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.