Study of electronic properties by persistent photoconductivity measurement in Gaxin1-xNyAs1-y grown by MOCVD

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2454-2457

  Hsu, S H ^a   Su, Y K ^a   Chuang, R W ^a   Chang, S J ^a   Chen, W C ^a   Chen, W R ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

GaInNAs; Hall mobility; PL; PPC; XRD

Indexed keywords

CRYSTALS; ELECTRONIC PROPERTIES; FILM GROWTH; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOCONDUCTIVITY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GAINNAS; HALL MOBILITY; PL; PPC; XRD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 21244487434     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2454     Document Type: Conference Paper

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