Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 28, Issue 3, 2005, Pages 230-236

  Han, Xiuxun ^a   Li, Jiemin ^a   Wu, Jiejun ^a   Cong, Guangwei ^a   Liu, Xianglin ^a   Zhu, Qinsheng ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Gate voltage; Inter subband transition; Two dimensional electron gas

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON GAS; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; PHONONS; PIEZOELECTRIC DEVICES; POLARIZATION;

GATE VOLTAGE; INTER-SUBBAND TRANSITION; OPTICAL INTERSUBBAND; TWO-DIMENSIONAL ELECTRON GAS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 21244465166     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.03.008     Document Type: Article

References (12)

1. S.J. Pearton, F. Ren, A.P. Zhang, and K.P. Lee Mater. Sci. Eng. R30 2000 55
2. O. Ambacher, B. Foutz, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, A.J. Sierakowski, W.J. Schaff, L.F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann J. Appl. Phys. 87 2000 334
3. B. Jogai J. Appl. Phys. 91 2002 3721
4. R.P. Joshi, S. Viswanadha, B. Jogai, P. Shah, and R.D. del Rosario J. Appl. Phys. 93 2003 10046
5. M. Kalafi, and A. Asgari Physica E 19 2003 321
6. D. Hofstetter, L. Diehl, J. Faist, W.J. Schaff, J. Hwang, L.F. Eastman, and C. Zellweger Appl. Phys. Lett. 80 2002 2991
7. K. Tsubaki, N. Maeda, T. Saitoh, T. Nishida, and N. Kobayashi Physica E 13 2002 1111
8. B. Vinter Appl. Phys. Lett. 44 1984 307
9. L. Hedin, and B.I. Lundqvist J. Phys. C 4 1971 2064
10. D. Ahn, and S.-L. Chuang IEEE J. Quantum Electron. 23 1987 2196
11. J.P. Ibbetson, P.T. Fini, K.D. Ness, S.P. DenBaars, J.S. Speck, and U.K. Mishra Appl. Phys. Lett. 77 2000 250
12. V.D. Jovanović, Z. Ikonić, D. Indjin, P. Harrison, V. Milanović, and R.A. Soref J. Appl. Phys. 93 2003 3194