Gate voltage dependence of subband structure in a two-dimensional electron gas in AlGaN/GaN heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1111-1114

  Tsubaki, K ^a   Maeda, N ^a   Saitoh, T ^a   Nishida, T ^a   Kobayashi, N ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

AlGan; Gan; Magnetoresistance; Subband; Two dimensional electron gas

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; GATES (TRANSISTOR); MAGNETORESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS;

SUBBAND STRUCTURES;

HETEROJUNCTIONS;

EID: 0036492694     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00315-6     Document Type: Conference Paper

References (9)