Electronics and optical properties of quantum well interdiffusion with valence band mixing

Physica B: Condensed Matter

Volumn 245, Issue 4, 1998, Pages 317-329

  Chan, Michael C Y ^a   Li, E Herbert ^a,c   Chan, K S ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c HARVARD UNIVERSITY   (United States)

Author keywords

Band structure; III V semiconductor; InGaAs InP; Interdiffusion; Optical gain; Quantum well

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL LATTICES; ELECTRONIC PROPERTIES; ENERGY GAP; FERMI LEVEL; INTERDIFFUSION (SOLIDS); OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

FERMI GOLDEN RULE; FICK'S LAW; OPTICAL GAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0348202942     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(97)00893-4     Document Type: Article

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