Depletion characteristics of two-dimensional lateral p-n-junctions

Applied Physics Letters

Volumn 86, Issue 16, 2005, Pages 1-3

  Reuter, D ^a   Werner, C ^a   Wieck, A D ^a   Petrosyan, S ^b,c  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b YEREVAN STATE UNIVERSITY   (Armenia)

^c RUSSIAN ARMENIAN UNIVERSITY   (Armenia)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION LAYER CAPACITANCE; P-N-JUNCTIONS; STANDARD PHOTOLITHOGRAPHY; VANDER PAUW GEOMETRY;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON GAS; HALL EFFECT; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES;

SEMICONDUCTOR JUNCTIONS;

EID: 20944442076     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897829     Document Type: Article

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