Local two-dimensional electron gas formation in p-doped GaAs/InyGa1-yAs/AlxGa1-xAs heterostructures by focused Si-implantation doping

Semiconductor Science and Technology

Volumn 17, Issue 6, 2002, Pages 585-589

  Reuter, D ^a   Meier, C ^a   Riedesel, C ^a   Wieck, A D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON GAS; HOLE MOBILITY; ION IMPLANTATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM ARSENIDE; ELECTRON CONCENTRATION;

HETEROJUNCTIONS;

EID: 0036611137     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/6/315     Document Type: Article

References (11)