Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices

Applied Physics Letters

Volumn 79, Issue 3, 2001, Pages 377-379

  Reuter, D ^a   Meier, C ^a   Álvarez, M A Serrano ^a   Wieck, A D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DEGRADATION; HALL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; THERMODYNAMIC STABILITY;

DOPED HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0035898526     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1386618     Document Type: Article

References (12)