Development of surface morphology of epitaxial Al2O3 on silicon by controlling reaction between oxygen and silicon surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 A, 1999, Pages 853-856

  Kimura, Takayuki ^a   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Epitaxial Al2O3; Heteroepitaxial growth; O2; Surface morphology; UHV CVD

Indexed keywords

EID: 0141909245     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.853     Document Type: Article

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