Epitaxial growth of Pt(0 0 1) thin films on Si substrates using an epitaxial γ-Al2O3(0 0 1) buffer layer

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 463-467

  Akai, D ^a   Hirabayashi, K ^a   Yokawa, M ^a   Sawada, K ^a   Ishida, M ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. Deposition; A1. RF sputter; B1. Al2O 3; B1. Platinum

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; ELECTRON BEAMS; EPITAXIAL GROWTH; FILM GROWTH; PLATINUM; POLYCRYSTALLINE MATERIALS; PYROLYSIS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SPUTTERING; THERMOCOUPLES; X RAY DIFFRACTION ANALYSIS;

Γ-AL2O3; LATTICE MISMATCHING; RF SPUTTER;

FERROELECTRIC THIN FILMS;

EID: 1342264103     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.048     Document Type: Article

References (14)

1. Merz W.J. Phys. Rev. 76:1949;1221.
2. Okuyama M., Hamakawa Y. Int. J. Eng. Sci. 29:1991;391.
3. Ogawa T., Senda A., Kasnami T. Jpn. J. Appl. Phys. 30:1991;2145.
4. Iijima K., Tomita Y., Takayama R., Ueda I. J. Appl. Phys. 60:1986;361.
5. Kim S., Baik S. J. Vac. Sci. Technol. A. 13:1995;95.
6. Lairson B.M., Visokay M.R., Sinclair R., Hagstrom S., Clemens B.M. Appl. Phys. Lett. 61:1992;1390.
7. Ahn K.H., Baik S., Kim S.S. J. Mater. Res. 17:2002;2334.
8. Lee C.S., Chung S.W., Kim Y.C., Chung I.S., Wee D.M., Lee W.J. Surf. Coat. Technol. 90:1997;229.
9. Ishida M., Katakabe I., Ohtake N., Nakanura T. Appl. Phys. Lett. 52:1988;1326.
10. Kimura T., Ishida M. Jpn. J. Appl. Phys. 38:1999;853.
11. Ishida M., Hori H., Kondo F., Akai D., Sawada K. Jpn. J. Appl. Phys. 39:2000;2078.
12. Raoph. W. G. Wyckoff, Crystal Structures, Vol. 3, 2nd Edition, Interscience Publishers, New York, 1965.
13. Sawada K., Ishida M., Nakamura T., Ohtake N. Appl. Phys. Lett. 52:1988;1672.
14. Ishida M., Sawada K., Yamaguchi S., Nakamura T., Suzaki T. Appl. Phys. Lett. 55:1989;556.