Heteroepitaxial growth of GaN on γ-Al2O3/Si substrate by organometallic vapor phase epitaxy

Sensors and Materials

Volumn 14, Issue 5, 2002, Pages 263-270

  Wakahara, Akihiro ^a   Kawamura, Nobuharu ^a   Oishi, Hiroshi ^a   Okada, Hiroshi ^a   Yoshida, Akira ^a   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Al2O3; GaN; Heteroepitaxy; OMVPE; Si substrate

Indexed keywords

EID: 0036354446     PISSN: 09144935     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)