Fabrication of Pb(Zr,Ti)O3 films on epitaxial γ -Al 2O3(0 0 1)/Si(0 0 1) substrates

Journal of Crystal Growth

Volumn 259, Issue 1-2, 2003, Pages 90-94

  Akai, Daisuke ^a   Sawada, Kazuaki ^a   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A3. Sol gel; B1. Epitaxial Al2O3; B1. Pb(Zr,Ti)O3; B1. Perovskite; B2. Ferroelectric materials

Indexed keywords

ALUMINA; CRYSTAL ORIENTATION; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; PEROVSKITE; SOL-GELS;

NONVOLATILE MEMORY APPLICATIONS;

EPITAXIAL GROWTH;

EID: 0141929540     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01587-2     Document Type: Article

References (13)

1. Wu S.Y. IEEE Electron Dev. 21:1974;499.
2. Sugibuchi K., Kurogi Y., Endo N. J. Appl. Phys. 46:1975;2877.
3. Higuma Y., Matsui Y., Okuyama M., Nakagawa T., Hamakawa Y. Jpn. J. Appl. Phys. 17(Suppl. 17-1):1978;209.
4. Lampe D.R., Adams D.A., Austin M., Polinsly M., Dzimianski J., Ssinharoy S., Buhay H., Braband P., Liu Y.M. Ferroelectrics. 133:1992;61.
5. Shichi Y., Tanimoto S., Goto T., Kuroiwa K., Tarui Y. Jpn. J. Appl. Phys. 33:1994;5172.
6. Hirai T., Teramoto K., Nagashima K., Koike H., Tarui Y. Jpn. J. Appl. Phys. 34:1995;4163.
7. Tokumitsu E., Nakamura R., Ishiwara H. IEEE Electron Dev. Lett. 18:1997;160.
8. Ishida M., Katakabe I., Ohtake N., Nakanura T. Appl. Phys. Lett. 52:1988;1326.
9. Kimura T., Ishida M. Jpn. J. Appl. Phys. 38:1999;853.
10. Ishida M., Hori H., Kondo F., Akai D., Sawada K. Jpn. J. Appl. Phys. 39:2000;2078.
11. Shahjahan Md., Takahashi N., Sawada K., Ishida M. Jpn. J. Appl. Phys. 41:2002;L1474.
12. Touge N., Takahashi S., Minami T. J. Am. Ceram. Soc. 74:1991;67.
13. Davis L.E., MacDonald N.C., Palmberg P.W., Riach G.E., Weber R.E. Handbook of Auger Electron Spectroscopy. 2nd Edition:1976;Physical Electronics Industries, Minnesota.