Fabrication of the Si/Al2O3/SiO2/Si structure using O2 annealed Al2O3/Si structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2078-2082

  Ishida, Makoto ^a   Hori, Hirotsugu ^a   Kondo, Fumitaka ^a   Akai, Daisuke ^a   Sawada, Kazuaki ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Epitaxial Al2O3; Formation of SiO2; Heteroepitaxial growth; MOSFET; SOI; UHV CVD

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC INSULATION; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; MORPHOLOGY; MOSFET DEVICES; PHASE INTERFACES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRUCTURE (COMPOSITION);

BREAKDOWN VOLTAGE PROPERTY; SEPARATION BY ION IMPLANTED OXYGEN; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0033706550     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2078     Document Type: Article

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