Atomic scale analysis of InGaN multi-quantum wells

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 357-362

  Benamara, M ^a   Liliental Weber, Z ^a   Swider, W ^a   Washburn, J ^a   Dupuis, R D ^b   Grudowski, P A ^b   Eiting, C J ^b   Yang, J W ^c   Khan, M A ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b The University of Texas at Austin   (United States)

^c UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL DEFECTS; CRYSTAL LATTICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR STRUCTURE; NUMERICAL ANALYSIS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; STIMULATED EMISSION; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC SCALE ANALYSIS; HIGH RESOLUTION IMAGES; INDIUM GALLIUM NITRIDE; PERIODIC MODULATION; VEGARDS LAW;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033345560     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-357     Document Type: Conference Paper

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