Electromigration of lower and upper Cu lines in dual-damascene Cu interconnects

Materials Research Society Symposium - Proceedings

Volumn 766, Issue , 2003, Pages 133-138

  Krishnamoorthy, Ahila ^a   Qiang, Guo ^a   Vairagar, Anand V ^b   Mhaisalkar, Subodh ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; ELECTROMIGRATION; INTERFACES (MATERIALS); OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RELIABILITY;

COPPER OXIDES INTERCONNECTS; DAMASCENE INTERCONNECTS;

COPPER;

EID: 0346308403     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-766-e3.13     Document Type: Conference Paper

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