Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: Interface and dielectric traps

IEEE International Integrated Reliability Workshop Final Report

Volumn 2003-January, Issue , 2003, Pages 24-27

  Kang, A Y ^a   Lenahan, P M ^a   Vonley, J F ^b   Ono, Y ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

Annealing; Capacitance; Dielectric measurements; Electrodes; Electron traps; Hafnium oxide; Paramagnetic resonance; Semiconductor films; Spectroscopy; Voltage

Indexed keywords

CHARGE TRAPPING; DIELECTRIC MATERIALS; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRONS; ELECTROSPINNING; HAFNIUM OXIDES; MAGNETIC MOMENTS; OXIDE FILMS; PARAMAGNETIC RESONANCE; SPIN DYNAMICS; ZIRCONIA;

ANNEALING; CAPTURE CROSS SECTIONS; DIELECTRIC MEASUREMENTS; ELECTRON SPIN RESONANCE MEASUREMENTS; SEMICONDUCTOR FILMS; SUPEROXIDES IONS; SYSTEMS INTERFACES; TRAPPED ELECTRONS;

CAPACITANCE;

EID: 20444445037     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2003.1283294     Document Type: Conference Paper

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