Cooper pair cotunneling in single charge transistors with dissipative electromagnetic environment

Physical Review Letters

Volumn 91, Issue 19, 2003, Pages

  Lotkhov, S V ^a   Bogoslovsky, S A ^a   Zorin, A B ^a   Niemeyer, J ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTROMAGNETISM; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ENERGY DISSIPATION; JOSEPHSON JUNCTION DEVICES; MODULATION; SUPERCONDUCTING MATERIALS; THRESHOLD VOLTAGE;

COOPER PAIR COTUNNELING; COOPER PAIR CURRENT; COTUNNELING CURRENT; DISSIPATIVE ELECTROMAGNETIC ENVIRONMENT; GATE INDUCED CHARGE; SUPERCONDUCTING SINGLE CHARGE TRANSISTORS; TRANSPORT VOLTAGES;

TRANSISTORS;

EID: 0348107266     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.91.197002     Document Type: Article

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