Fabrication of ultrasmall tunnel junctions by electron beam direct-writing

IEEE Transactions on Applied Superconductivity

Volumn 11, Issue 1 I, 2001, Pages 373-376

  Born, Detlef ^a   Wagner, Thomas ^a   Krech, Wolfram ^a   Hübner, Uwe ^b   Fritzsch, Ludwig ^b  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

Author keywords

E beam direct writing; High melting metals; SET; Sputtering

Indexed keywords

ALUMINUM; CAPACITANCE; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; ETCHING; GATES (TRANSISTOR); ION BEAMS; NIOBIUM; SPUTTER DEPOSITION; TRANSISTORS;

ELECTRON BEAM DIRECT WRITING; HIGH-MELTING METAL; ION BEAM ETCHING; SHADOW EVAPORATION; SINGLE ELECTRON TRANSISTOR;

TUNNEL JUNCTIONS;

EID: 0035268922     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.919360     Document Type: Conference Paper

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