A high density 4 kA/cm2 Nb integrated circuit process

IEEE Transactions on Applied Superconductivity

Volumn 11, Issue 1 I, 2001, Pages 1061-1065

  Kerber, G L ^a   Abelson, L A ^a   Leung, M L ^a   Herr, Q P ^a   Johnson, M W ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Barrier oxidation; Critical current; Inductance; Josephson junction; Junction capacitance; Niobium; SFQ; Single flux quantum; Superconductor integrated circuit; T flip flop

Indexed keywords

CAPACITANCE; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CURRENT VOLTAGE CHARACTERISTICS; DIGITAL DEVICES; DRY ETCHING; FLIP FLOP CIRCUITS; INDUCTANCE; INTEGRATED CIRCUIT MANUFACTURE; NIOBIUM; OXIDATION; PHOTOLITHOGRAPHY; PRESSURE CONTROL;

BARRIER OXIDATION METHOD; CIRCUIT PERFORMANCE; CIRCUIT SPEED; DEFECT REDUCTION; DIGITAL SUPERCONDUCTOR INTEGRATED CIRCUIT; ELECTRICAL PERFORMANCE; INTEGRATED CIRCUIT PROCESS;

JOSEPHSON JUNCTION DEVICES;

EID: 0035269133     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.919530     Document Type: Conference Paper

References (13)

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