High quality MPCVD epitaxial diamond film for power device application

Materials Research Society Symposium Proceedings

Volumn 829, Issue , 2005, Pages 293-300

  Yang, Jie ^a,b   Huang, Weixiao ^c   Chow, T P ^c   Butler, James E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NOVA RESEARCH INC   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIAMONDS; DIODES; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; FILM GROWTH; MESFET DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; THERMAL CONDUCTIVITY;

EPITAXIAL DIAMOND FILMS; HOMO-EPI FILMS; POTENTIAL CONDUCTIVITY; POWER LEVELS;

THIN FILMS;

EID: 20444417394     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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