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Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 661-665

Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (1 1 3)B InP substrates

(8) Frechengues S a Bertru, N a Drouot, V a Paranthoen, C a Dehaese, O a Loualiche, S a Le Corre, A a Lambert, B a

a INSA DE RENNES (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DENSITY (SPECIFIC GRAVITY); EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); INDIUM ARSENIDE; STRANSKI-KRASTANOV MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0342757794 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00593-X Document Type: Article

Times cited : (8)

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