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Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 77-82

Step coverage and composition of Pb(Zr,Ti)O3 capacitors prepared on sub-micron three-dimensional trench structure by metalorganic chemical vapor deposition

(7) Nagai, Atsushi a Asano, Gouji a Minamidate, Jun a Choi, Chel Jong b Cho, Choong Rae b Park, Youngsoo b Funakubo, Hiroshi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; COMPOSITION; CONFORMATIONS; CRYSTALLIZATION; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SILICA; THIN FILMS; TITANIUM NITRIDE;

COMPOSITION FLUCTUATION; DEPOSITION RATE; HIGH-DENSITY INTEGRATION; NON-VOLATILE MEMORIES;

CAPACITORS;

EID: 20344391143 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (8)

References (10)

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