Transformation of electrical activity of extended defects in silicon polycrystals under annealing and hydrogen plasma treatment

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 353-363

  Fedotov, A ^a   Drozdov, N ^a   Katz, E ^c   Ilyashuk, Yu ^a   Mazanik, A ^a   Ulyashin, A ^b  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b BELARUSIAN NATIONAL TECHNICAL UNIVERSITY   (Belarus)

^c BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FILM GROWTH; GRAIN BOUNDARIES; HYDROGENATION; POLYCRYSTALS; SEMICONDUCTOR GROWTH;

ELECTRICAL ACTIVITY; HYDROGEN PLASMA TREATMENT; POLYSILICON CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0032756493     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<353::AID-PSSA353>3.0.CO;2-Y     Document Type: Article

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