Effects of growth variables on structural and optical properties of InGaN/GaN triangular-shaped quantum wells

Korean Journal of Chemical Engineering

Volumn 22, Issue 2, 2005, Pages 298-302

  Choi, Rak Jun ^a   Suh, Eun Kyung ^a   Lee, Hyung Jae ^a   Hahn, Yoon Bong ^a  

^a Chonbuk National University   (South Korea)

Author keywords

InGaN GaN; Light emitting Diode; Quantum Dot; Quantum Well

Indexed keywords

DEGRADATION; EXCITONS; HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

FLOW RATES; GROWTH TEMPERATURE; INGAN/GAN; THERMAL EXPANSION COEFFICIENTS;

GROWTH KINETICS;

EID: 20344375470     PISSN: 02561115     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02701501     Document Type: Article

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