Structural and Optical Properties of InGaN/GaN Triangular-Shape Quantum Wells with Different Threading Dislocation Densities

Korean Journal of Chemical Engineering

Volumn 21, Issue 1, 2004, Pages 292-295

  Choi, Rak Jun ^a   Lee, Hyung Jae ^a   Hahn, Yoon Bong ^a   Cho, Hyung Koun ^b  

^a Chonbuk National University   (South Korea)

^b Dong A University   (South Korea)

Author keywords

InGaN GaN; Light emitting Diodes; Multiple Quantum Wells; Threading Dislocation

Indexed keywords

LIGHT EMITTING DIODES; NUCLEATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

INGAN/GAN; THREADED DISLOCATION;

GALLIUM NITRIDE;

EID: 1942540061     PISSN: 02561115     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02705411     Document Type: Article

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