Improvement of Electrical and Optical Properties of InGaN/GaN-Based Light-Emitting Diodes with Triangular Quantum Well Structure

Korean Journal of Chemical Engineering

Volumn 20, Issue 6, 2003, Pages 1134-1137

  Choi, Rak Jun ^a   Hahn, Yoon Bong ^a   Shim, Hyun Wook ^a   Suh, Eun Kyung ^a   Hong, Chang Hee ^a   Lee, Hyung Jae ^a  

^a Chonbuk National University   (South Korea)

Author keywords

InGaN GaN; Light emitting Diodes; Quantum Well Structures

Indexed keywords

BAND STRUCTURE; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; GALLIUM NITRIDE; OPTICAL PROPERTIES; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

INGAN/GAN; QUANTUM WELL STRUCTURES;

LIGHT EMITTING DIODES;

EID: 0442295438     PISSN: 02561115     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02706949     Document Type: Article

References (11)

1. Choi, R. J., Hahn, Y. B., Shim, H. W., Han, M. S., Suh, E. K. and Lee, H. J., "Efficient Blue Light-Emitting Diodes with InGaN/GaN Triangular Shaped Multiple Quantum Wells", Appl. Phys. Lett., 82, 2764 (2003).
2. Crowell, P. A., Yong, D. K., Keller, S., Hu, E. L. and Awschalom, D. D., "Near-field Scanning Optical Spectroscopy of an InGaN Quantum Well", Appl. Phys. Lett., 72, 927 (1998).
3. Hahn, Y. B., Choi, R. J., Hong, J. H., Park, H. J. and Lee, H. J., "High-Density Plasma-Induced Etch Damage of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes", J. Appl. Phys., 92, 1189 (2002).
4. Hahn, Y. B. and Pearton, S. J., "Global Self-Consistent Model of an Inductively Coupled Plasma Etching System", Korean J. Chem. Eng., 17, 304 (2000).
5. 2/Ar Discharges with a Low-Frequency-Excited DC Bias", J. Korean Physical Society, 39(4), 617 (2001).
6. Im, Y. H. and Hahn, Y. B., "Heat Transfer between Wafer and Electrode in a High Density Plasma Etcher", Korean J. Chem. Eng., 19, 347 (2002).
7. 1-xN Quantum Wells", Phys. Rev. B, 57, R9435 (1998).
8. Jeong, M. S., Kim, J. Y., Kim, Y.-W., White, J. O., Suh, E. K., Hong, C.-H. and Lee, H. J., "Spatially Resolved Photoluminescence in InGaN/GaN Quantum Wells by Near-field Scanning Optical Spectroscopy", Appl. Phys. Lett., 79, 976 (2001)
9. Nakamura, S., "Current Status and Future Prospects of InGaN-Based Laser Diodes", Jpn Soc.Appl. Phys. Int., No. 1, 5 (2000).
10. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M. and Chocho, K., Jpn. J. Appl. Phys., Part 2 36, L1568 (1997).
11. Wang, T., Bai, J. and Sakai, S., "Investigation of the Emission Mechanism in InGaN/GaN-Based Light-Emitting Diodes", Appl. Phys. Lett., 78, 2617 (2001).