Optical degradation of InGaN/GaN multi quantum well LED structures induced by the Mg-doped p-GaN activation temperature

Journal of the Korean Physical Society

Volumn 41, Issue 5, 2002, Pages 778-782

  Youn, C J ^a   Jeong, T S ^a   Han, M S ^a   Yang, J W ^a   Lim, K Y ^a   Yu, H W ^b  

^a Chonbuk National University   (South Korea)

^b TFT 2 Team   (South Korea)

Author keywords

InGaN GaN multi quantum wells; LED; Mg activation annealing; Photoluminescence

Indexed keywords

EID: 0036865503     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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