AlGaN/GaN HEMT on sapphire using FC bonding

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 5, 2005, Pages 990-993

  Chen, Xiaojuan ^a   Liu, Xinyu ^a   Shao, Gang ^a   Liu, Jian ^a   He, Zhijing ^a   Wang, Suofa ^a   Wu, Dexin ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

AlGaN GaN; FC; Heterostructure field effect transistors; Thermal impedance

Indexed keywords

FIELD EFFECT TRANSISTORS; HEAT RESISTANCE; MATHEMATICAL MODELS; SAPPHIRE; SUBSTRATES;

FC BONDING; HEAT DISSIPATION; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; SATURATION CURRENT; THERMAL IMPEDANCE;

GALLIUM NITRIDE;

EID: 20344372431     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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