Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 71, Issue 11, 1997, Pages 1513-1515

  Qian, Li ^a   Benjamin, S D ^a   Smith, P W E ^a   Robinson, B J ^b   Thompson, D A ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000421679     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119952     Document Type: Article

References (14)

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