Submicron spin valve magnetoresistive random access memory cell

Journal of Applied Physics

Volumn 81, Issue 8 PART 2A, 1997, Pages 3992-3994

  Chen, E Y ^a   Tehrani, S ^a   Zhu, T ^a   Durlam, M ^a   Goronkin, H ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001643761     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364917     Document Type: Article

References (6)

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3. J. O Oti, R. W. Cross, S. E. Russek, and Y. K. Kim, IEEE Trans. Magn. MAG-32, 4606 (1996).
4. A. V. Pohm, R. S. Beech, J. M.Daughton, E. Y. Chen, M. Durlam, K. Nordquist, T. Zhu, and S. Tehrani, J. Appl. Phys. 79, 5889 (1996).
5. Y. Zheng and J. G. Zhu, IEEE Trans. Magn. 32, 4237 (1996).
6. S. Tehrani, E. Y. Chen, M. Durlam, T. Zhu, and H. Goronkin, IEDM, Dec., (1996).