Pseudo-spin-valve device performance for giant magnetoresistive random access memory applications

IEEE Transactions on Magnetics

Volumn 37, Issue 4 I, 2001, Pages 1967-1969

  Katti, R R ^b   Arrott, A ^b   Drewes, J ^b   Larson, W ^b   Liu, H ^b   Lu, Y ^b   Vogt, T ^b   Zhu, T ^a,b  

^a IEEE

^b HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

Giant magnetoresistive random access memory; Pseudo spin valve devices; Temperature effects

Indexed keywords

GIANT MAGNETORESISTANCE; MAGNETIC ANISOTROPY; MAGNETIC FIELD EFFECTS; MAGNETIZATION; RANDOM ACCESS STORAGE; THERMAL EFFECTS;

PSEUDO SPIN VALVE (PSV) DEVICES;

MAGNETIC STORAGE;

EID: 0035386526     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.951023     Document Type: Article

References (8)

1. The effect of end and edge shape on the performance of pseudo-spin valve memories
2. End domain states and magnetization reversal in submicron magnetic structures
3. Submicron spin valve magnetoresistive random access memory cell
4. High-density submicron magnetoresistive random access memory
5. Progress and outlook for MRAM technology
6. Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures
7. Magnetoelectronic memories last and last
8. Hybrid ferromagnet semiconductor devices