Lithographic characteristics of 193-nm resists imaged at 193 and 248 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 571-578

  Opitz, Juliann ^a   Allen, Robert D ^a   Wallow, Thomas I ^a   Wallraff, Gregory M ^a   Hofer, Donald C ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

193nm imaging; Dual wavelength resist; Optical transparency

Indexed keywords

PHOTORESISTORS; PHOTORESISTS; POLYMERS; SURFACE TREATMENT;

193 NM PHOTORESISTS; 193-NM LITHOGRAPHIES; 193-NM RESISTS; 193NM IMAGING; ABSORBANCE; BACKWARD COMPATIBLE; DUAL-WAVELENGTH RESIST; DUV LITHOGRAPHIES; ETCH RESISTANCES; OPTICAL TRANSPARENCY; REACTIVE IONS;

TRANSPARENCY;

EID: 0006546195     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312469     Document Type: Conference Paper

References (6)

1. R. Allen, W. Conley, R. Kunz, "Deep UV Resist Technology", Chapter 4 in Handbook of Microlithography, SPIE Optical Engineering Press, Bellingham, WA, (1997).
2. T. Wallow, R. Allen, J. Opitz, R. DiPietro, and D. Hofer, " Reactive ion etching of 193nm photoresists candidates: an assessment of current platforms and future production requirements". Proc. SPIE, 3333, in press, (1998).
3. R. Allen, G. Wallraff, R. DiPietro, D. Hofer, and R. Kunz, Proc. SPIE, 2438, 474, (1995).
4. R. Allen, Semiconductor International, 20(10), 72, 1997.
5. R. Allen, J. Opitz, C. Larson, R. DiPietro, G. Breyta, and D. Hofer, Proc. SPIE, 3049, 44, (1997).
6. R. Allen, T. Wallow, R. Allen, J. Opitz, R. DiPietro, and D. Hofer, " Design of an etch-resistant cyclic olefin photoresist for 193nm lithography", Proc. SPIE, 3333, in press, 1998.