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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 229, Issue 1, 2005, Pages 65-72

High frequency electromagnetic field processing of amorphous silicon layers containing nanoclusters produced by implantation of metal ions in Si(1 0 0) matrix

(10) Kalitzova, Maria a Gesheva, Kostadinka b Vlakhov, Emil a Marinov, Yordan a Gogova, Daniela b Ivanova, Tatyana b Angelov, Christo c Pashov, Nikolai a Zollo, Giuseppe d Vitali, Gianfranco d

a INSTITUTE OF SOLID STATE PHYSICS (Bulgaria)

b CTRL LAB SOLAR ENER NEW ENER S (Bulgaria)

c INSTITUTE FOR NUCLEAR RESEARCH AND NUCLEAR ENERGY (Bulgaria)

d SAPIENZA UNIVERSITY OF ROME (Italy)

Author keywords

Electrical resistance; High frequency electromagnetic field treatment; Ion implantation; Nanoclusters; XTEM

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ION IMPLANTATION; MAGNETOELECTRIC EFFECTS; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH-FREQUENCY ELECTROMAGNETIC FIELD TREATMENT; ION BEAM CURRENTS; NANOCLUSTERS; SOLID PHASE EPITAXIAL GROWTH (SPEG);

AMORPHOUS SILICON;

EID: 20144372349 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/j.nimb.2004.10.088 Document Type: Article

Times cited : (5)

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