High-dose phenomena in zinc-implanted silicon crystals

Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3470-3476

  Simov, S ^a,c   Kalitzova, M ^a,c   Karpuzov, D ^a,d   Yankov, R ^a,d,e   Angelov, Ch ^a,f   Faure, J ^b   Bonhomme, P ^b   Balossier, G ^b  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^c Institute of Solid State Physics

^d Inst Electronics

^e INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^f Institute of Nuclear Research

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006971678     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361395     Document Type: Article

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